for general purpose applications this diodes features very low turn-on voltage and fas t s witching. this devices are protected case:jedec do--35,glass case weight: approx. 0.13 gram symbols min. units 50.0 v v v v v v a pf ns /w 200 1) 125 v f value 50.0 200 1) 500 1) 5 300 1) 1) valid provided that leads at a distance of 4mm from case are kept at ambient temperature continuous reverse voltage forw ard continuous current @ t a =25 repetitive peak forw ard current @ tp<1s, <=0.5,t a =25 0.6 0.9 5.0 8 t rr r ja @ i f =100ma leakage current v r =40v junction capacitance at v r =1v,f =1mhz reverse recovery time form i f =10ma to i r =10ma to i r =1ma max. ty p. c-55 ---+ 150 electrical characteristics forw ard voltage v ma ma mw p tot t j t a voltage, s uch as electros tatic dis charges pow er dissipation @ t a =25 fast switching and low logic level applications metal silicon schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fas t s witching m ake it ideal for protection of mos devices,steering,biasing and coupling diodes for units c-55 ---+ 125 polarity: color band denotes cathode end absolute ratings v r i f i frm junction temperature ambient operating temperature range by a pn junction guard ring agains t exces s ive voltage range: 50 v current: 0.2 a do - 35(glass) @ i f =10ma @ i f =30ma 0.365 0.7 i r 0.2 0.3 storage temperature range t stg reverse breakdow n voltage tested w ith 100 a pulses symbols v r 0.38 pulse test tp<300 s, <2% @ i f =0.1ma @ i f =1ma 0.45 1)valid provided that leads at a distance of 4mm from case are kept at ambient temperature 0.275 0.46 thermal resistance junction to ambient air c j dimensions in millimeters bat 86 small signal schottky diodes features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn
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